Resistive switching of memristors base on epitaxial structures p-Si/p-Ge/n-=SUP=-+-=/SUP=--Si(001) with Ru and Ag electrodes
نویسندگان
چکیده
The electrical parameters of the prototype memristors based on p-Si/p-Ge/n + -Si(001) epitaxial heterostructures with Ag and Ru electrodes have been studied. demonstrated smaller electroforming voltage greater ratio currents in low high resistance values as compared to electrodes. Also, an inversion switching polarity was observed Thses effects originate from a higher mobility 3+ ions threading dislocations p-Si/p-Ge layers due ion radius. Keywords: Memristor, SiGe layers, switching.
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ژورنال
عنوان ژورنال: Pis?ma v Žurnal tehni?eskoj fiziki
سال: 2023
ISSN: ['1726-7471', '0320-0116']
DOI: https://doi.org/10.21883/tpl.2023.01.55336.19367